Stefan,

My experience was: running a long etch with Ar will change your silicon
etch process, especially when running at low pressure and high power.


Xu Zhu

-----Original Message-----
From: Jim Beall [mailto:beall@boulder.nist.gov]
Sent: Monday, September 15, 2003 10:23 AM
To: General MEMS discussion
Subject: Re: [mems-talk] SF6 Glas etching

Stefan -

I wonder if you ever received any useful information in response to
this inquiry?

We also have an STS ASE system and were told to never do anything
else so as to not disturb the chamber chemistry, but I wonder how
critical this really is.

Thanks,

Jim

>Dear colleagues
>>From the publication of Ichiki et al. Thin Solid Films 435 (2003)
62-68
>I learned that glas
>etching with SF6 and Ar works quiet well. When we bought 4 years ago a
>ICP system (STS)
>for Si deep etching and a RIE system for glas (resp SiO2, Si3N4)
etching
>we were told from STS not to do
>both processes in the same chamber because of reproducibility.
>Does anyone has experience in running glas etch (SF6/Ar) and silicon
>deep etching
>on the same ICP system. Do I contaminate the si deep etching chamber by
>glass etching
>or is it possible to clean up the system without open it (no mechanical
>clean)?
>
>Thanks for response.
>Greetings
>Stefan

--

  - Jim Beall 303-497-5989
    beall@boulder.nist.gov