Similair stiction problems have been circumvented by using a dry release process using standard photo resist as supporting layer after sacrificial wet etching. The process is the following: 1: Sacrificial wet etch of SiO2 (BHF) 2: Rinsing H2O (the sample with the suspended cantilever is never allowed to drie out) 3: Apply Acetone 4: Apply Photo resist in large amounts until the liquid covering the sample is "only" consentrated photo resist 5: Spin at 1500 rpm for a short time of 30s 6: soft-bake 1 min 7: Use oxygen plasma ashing in a RIE for the dry release (99:20 sccm O2:N2, 30 W, 80 mTorr for 15 min) Regards __________________________________________________ Esko Forsén Ph.D. Student, Bioprobes project MIC - Mikroelektronik Centret Technical University of Denmark Address: Oersteds Plads, DTU Building 345 east DK-2800 Kgs. Lyngby, Denmark Tel. Direct: +45 4525 5733 Fax: +45 4588 7762 E-mail: ef@mic.dtu.dk www: www.mic.dtu.dk __________________________________________________ -----Original Message----- From: Saurabh Nishant [mailto:nishu7uf@yahoo.com] Sent: 24. oktober 2003 13:16 To: mems-talk@memsnet.org Subject: [mems-talk] polysilicon stiction problem Dear MEMS colleagues, I am a student at indian institute of science and facing the problem of stiction in polysilicon cantilivers after sacrificial layer etching.I would appreciate if any one can suggest me some means to overcome this problem.I suspect both the resifual stress and capillary forces are reponsible.Any help would be highly appreciated. thanks. regards nishant --------------------------------- Do you Yahoo!? The New Yahoo! Shopping - with improved product search