Nishant, I have a big stiction problem between a top silicon device layer and bottom handle layer after I perform a wet HF realease to etch oxide from underneath the silicon device layer. I have tried the critical dryer and it did not help significantly. -- Shweta Humad -----Original Message----- From: mems-talk-bounces+shweta=ece.gatech.edu@memsnet.org [mailto:mems-talk-bounces+shweta=ece.gatech.edu@memsnet.org] On Behalf Of kris Sent: Friday, October 24, 2003 12:29 PM To: General MEMS discussion Subject: Re: [mems-talk] polysilicon stiction problem Nishant, Can you try dry etching for the removal of the sacrificial layer under the polysilicon. You can also try critical point drying after sacrificial layer is etched. Another solution is to add dimples(during design) underneath the polysilicon beams so that it can give less contact surface area towards liquid underneath. Kris