>I am trying to sputter thick Cu ( 1 um) in a DC sputtering system.my >sputtering conditions are as follows :- >base pr- 10 exp(-6) torr >chamber pr -10 m torr >Ar gas flow - 10 sccm. >power - 250 W >Target to substrate distance - 5 cm. > >my problem is that the resistivity of my deposited Cu is very high (24 >micro ohm cm) which is about 15 times the bulk resistivity of Cu( 1.6 >micro ohm cm). With your base pressure level and low power, dep. time is very long and a lot of contaminants get incorporated in the film. Leading edge CMOS fabs use b.p. <1E-8 torr, 5-10kW power. Even then, as-deposited Cu resistance is higher than bulk (~2.5µOhmcm), subsequent anneal will reduce it to <2µOhmcm. best regards, klaus -- Klaus Beschorner Metron Technology Europe, PVD (Eclipse) Process Manager Drosselweg 6,71120 Grafenau,Germany. Tel +49-7033-45683