Hello, I need some help in silicon etching using RIE.

My job is to set up a RIE process for etching 0.15 um (feature
size) and 2 um (depth) . The target should be to meet the following
requirements:

1. we want ansiotropic walls. (90¡ã would be perfect)
2. Damages are to be kept as low as possible.
3. material would be (100) n-Si for now. Masking is silicon oxide.

I used bosch process for etching and found the results are not good.

I will try to use SF6 and O2.

Since the feature size is very small, please give me some hint from your own
experience.

Thank you for your help

Xiaodong




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