Yes, the influence of freely suspended structures in the DRIE (and in
all plasmas) has a significant affect on the etch geometry. First, the
suspended structures will heat more redilly in the plasma. Second, the
local electric field geometry is distorted. The results of these affects
are geometry and material dependant but frequently result in
sputtering/excess etching around the high field regions. Essentially you
loose selectivity to your masking layer.

-Mike Martin
 U. of Louisville

>>> microsenz@gmail.com 06/23/06 7:37 AM >>>
Hello,

Is heating of free-standing structure/entire wafer for instance an issue
in
DRIE, especially as a post-processing step ? How does DRIE
post-processing
influence CMOS? I would appreciate if someone can recommend me some
interesting publication(s) concerning the above.