Dear MEMS community,
    I am using a RF magnetron sputtering system to deposit Al and Cu film on
silicon substrate. The recipe is:
Ar flow rate: 80 sccm
RF power: 150 Watt
Base pressure:3e-3Pa
Pocess pressure: 0.8Pa
The Cu can be successfully deposited, but there is no Al deposited on the
silicon
substrate after 30 min sputtering. Would anyone give me an reasonable
explanation
or any suggestion or some tricks about that? Thanks in advance.

------------------------------
Sincerely yours,
Qiao-Da-Yong
Northwestern Polytechnical University
M/NEMS Lab.
P.O. Box 638, No.127 West FriendShip Road, Xi'an
P.R. China
ZipCode:710072
Tel£º86-029-88460353-8112
E-mail£ºdyqiao@nwpu.edu.cn