3 micro SiO2 will crack due to the residual stress. My suggestion is to deposit
it
three times, 1 micro each time with an annealling at 950 degree C.


>From: "Andrea Mazzolari" 
>Reply-To: mazzolari@fe.infn.it, General MEMS discussion 
>To: mems-talk@memsnet.org
>Subject: [mems-talk] SiO2 lpcvd deposition
>Date:Sat, 13 Jan 2007 20:30:40 +0100 (CET)
>
>Hi all. I need to deposit 3 micron of LPCVD SiO2. My gas sources are
> diclorosilane (DCS) and O2. Could you suggest me the best deposition
> conditions in order to obtain the highest possible deposition rate ?
> References to articles will be very appreciated.