I already deposit SiO2 at 950 C, so i don't think annealling will be
necessary.
Which LPCVD temperature do you use ?
Do you have any suggestion (gas flows) in order to obtain an high deposition
rate ?

Best regards,
Andrea.

-----Messaggio originale-----
Da: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] Per
conto di Qiao Dayong
Inviato: lunedì 15 gennaio 2007 5.17
A: mazzolari@fe.infn.it; mems-talk@memsnet.org
Oggetto: Re:[mems-talk] SiO2 lpcvd deposition

3 micro SiO2 will crack due to the residual stress. My suggestion is to
deposit it three times, 1 micro each time with an annealling at 950 degree
C.