Hi, I have tried to use AZ5214E in image reversal mode to pattern some alignment marks by lift-off process. I have compared the image reversal mode versus the positive imaging mode and found that the lift-off process using image reversal is much more difficult than the positive image mode. Can anyone advise me on this matter? Here is my image reversal process: 1. Coat SiO2 wafer with AZ5214E spun at 2500rpm. This gave me a resist of thickness 1.4-1.6um. 2. Soft bake at 95'C for 120s on hot plate. 3. Expose at 405nm near UV light with intensity of about 7.5mW/cm2 for 5.4s to obtain average energy of 40mJ/cm2. 4. Reversal bake on hot plate at 115'C for 120s. 5. Flood expose at 405nm with intensity of 7.5mW/cm2 for 160s to obtain average energy of 1200mJ/cm2. 6. Develop in AZ400K developer diluted in DI water to a ratio of 1:4 for 45-60s. 7. Thermal evaporation of 30nm Chromium. 8. Lift off via both Acetone and PGMEA (SU-8 developer). The wafer with the positive image was run as above except without the reversal bake aqnd flood exposure. Lift-off using the image reveral mode is very difficult even after overnight soak in PGMEA. Jeffrey