Hello Mark , I feel that pressure and power you applied is to high. Please try this combination: pressure=200 mT power between 250 to 300 watt. time 20 to 30 min best of luck jaibir On Wed, 16 Jan 2008 Curtis,Mark E. wrote : >Hello all, > >I’m using Shipley S1818 positive photoresist as a mask for wet-etching a 100 nm thick film of chromium. After using a wet chemical photoresist stripper there remains some photoresist residue on the surface of the chromium. I’ve attempt to use a Trion RIE to remove the photoresist residue with the following etch parameters: >Gases/Flow Rate (O2/50 sccm), >Pressure (500 mTorr), >RIE Power (25 W), ICP Power (500 W), and >Time (30 min). > >To my surprise, I found that not only did it remove the photoresist but also the chromium. Does anyone know of a good photoresist removal recipe for RIE that will not etch chromium. I have previously tried a shorter etch time (~10 min) but it did not completely remove the photoresist residue. with regrads Jaibir Sharma Reasearch Scholar(PhD) Electrical Department, IIT Madras, Chennai - 36 INDIA Phone:044-22575444(off) 09840396872(home)