Hello all,

I am trying to actuate a comb-actuator. However, I was not able to see
any movement under Karl Suss probe station.

The resistivity of my SOI wafer is 1-30 Ohmcm. Dopant tytpe is P/Boron.

The wafer is from ULTRASIL.

I am applying a static voltage differenece, i am not interested about
dynamic voltages for now. Is it a problem to use 1-30 Ohmcm
resistivity Silicon.

Thanks in advance,

Mehmet Yilmaz
PhD student
Mechanical engineer