You are better off using KOH if you can, is there a particular reason you
want
to use EDP. It is pretty nasty. If you still want to use it let me know, I
may
be able to send you some information.

Vijay


At 01:24 PM 8/6/98 +0530, you wrote:
>Hello,
>       We need to etch( anisotropic ) Si using Ethylene Diamine + Pyrocathechol
>We have procured the chemicals in sealed bottles WITHOUT the saftey /
>handling instructions. I would appreciate if somebody could help us
>either by giving a reference or the instructions themselves.
>       The crunch is heating the mixture to 80 deg C using a reflux system.
>
>Regards
>NK Choudhary
>
>
>***************************************************************************
***
>Electrical Engg.                             Flat No 7,Leo House,
>Microelectronics.                             Nana Palsekar Road,
>IIT Powai.                                    Opposite IIT Main Gate,
>Bombay- 400 076.                              Bombay- 400 076.
>email:                Tel : (022) 577 2339
>***************************************************************************
***
>
>
>
>


From ROLAND A. LEVY, DISTINGUISHED PROFESSOR OF PHYSICS, NJIT; TEL.   Mon Aug 17
18:57:03 1998
To: mems@isi.edu
Subject:   RE: TiN wet etching
From:   "ROLAND A. LEVY, DISTINGUISHED PROFESSOR OF PHYSICS, NJIT; TEL.
Date: Mon Aug 17 18:57:03 1998
Lines: 11

We grow LPCVD TiN and whenever wet etching is required we use a mixture
of ammonium hydroxide and hydrogen peroxide at room temperature. That may work
for you in terms of selectivity to silicon dioxide, silicon, and photoresist.

I will be away till August 26 but contact me after the 26 for further details
with optimal mixtures.

Best regards


Roland Levy