Hi, Sharma, thanks a lot for your reply. I am also using Cambridge nanotech
ALD.

Do you mean you pump for 120 sec after the pulse? Is your exposure time 0s?
And are theses parameters for both H2O and precursor?

Thanks.

Maggie



 Maggie Qianxi Lai
PH.D Candidate
Department of Mechanical & Aerospace Engineering
University of California, Los Angeles
http://www.chen.seas.ucla.edu/

  _____

From: jpt sharma [mailto:jptsharma@yahoo.com]
Sent: Friday, April 04, 2008 5:14 PM
To: General MEMS discussion; qlai@ucla.edu
Subject: Re: [mems-talk] Low-temperature ALD for Al2O3 or HfO2


HI maggie
I did some ALD for Al2O3at 40C in cambridge nanotech ALD. and I use pulse
time 0,015 sec and wait time 120 sec. The film looks good and growth rate is
0.78 A/cycle.
Hope this helps.