Hi everyone, Heres my second attempt to send you this e-mail. First attempt included SEM pictures; which was not allowed. Some of you may have received a blank e-mail, Im sorry for that. If you are interested by the SEM pictures I can send them to you directly. We currently have some problems with the deposition of aluminium layers. Maybe some of you already experienced that phenomenon: Some bump-like structures appear all over the sample after the annealing of the evaporated Al layer. These structures seem to be empty inside (cavern-like). The test samples are bare silicon cleaned with solvents (opticlear, acetone and IPA, 5min each in ultra-sound). They are then immersed in a solution of 8% HF: DI to etch the native oxide (10-15sec until hydrophobicity) just before evaporation. The aluminium is then evaporated (e-beam) at a rate of 0.3nm/sec (250nm). The samples surface seems very clean before the evaporation. After evaporation, the Al surface show little triangular protuberances (~100nm). The 450°C annealing, during 30min, reveals the cavern-like structures (~500nm-1µm). The annealing was performed under N2 atmosphere and forming gas (N2 80%, H2 20%); both lead to the same results. We dont know if this comes from - a cleaning problem (traces of water or solvent at the surface before evaporation), - some problem during evaporation (contamination, non uniform deposition, stresses) amplified during annealing, - some contamination in the oven. - Does anyone have any advices or suggestions? Thank you, Julie