I think you probably have a silicon suboxide and defects, but I would think that an O2 anneal would solve the problem. Even at 900 deg. C or maybe less. Ed -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of John Hilton Sent: Friday, November 21, 2008 1:27 PM To: General MEMS discussion Subject: Re: [mems-talk] SiO2 deposition I recently had OK results depositing a film of 2-3 microns SiO2 using an e-beam evaporator. The stoichiometry probably isn't exactly right, and this was backed up by the fact that the dielectric strength didn't seem as good as it should be (probably too much pure Si). I haven't tried a layer as thick as 20-30 microns. What is your application?