One recent reference is:
Resisual stress in low pressure chemical vapor deposition SiNx films
deposited from silane and ammonia
P. Temple-Boyer et al.
J. Vac. Sci. Technol. A 16(4), Jul/Aug 1998 2003-2007

lee ki seong wrote:
>
> Hi. colleague
>
> Is any body know how we can get low stress Si3N4 in PECVD using SiH4, NH3
>    RF POWER, Temp, Pressure, Vacuum.
>
> If some body has a trend to lessen the stress, would you inform me ?
>
> with thanks.
>

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Lionel BUCHAILLOT
Microsystemes Silicium
Silicon Microsystems
IEMN Departement ISEN
Cite Scientifique
Avenue Poincare - B.P. 69
59652 VILLENEUVE D'ASCQ Cedex
FRANCE

E-mail : buchaillot@isen.iemn.univ-lille1.fr

Phone : +33 3 20 19 78 38
Fax : +33 3 20 19 78 84
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