If you are using a Novellus tool, there is a manual which gives you hints about how to control stress. In general, higher %LF power gives a more compressive stress, as do lower pressure, and lower ammonia/silane ratio. You probably should consider doing a designed experiment in case there are any unknown interactions between these factors. Good luck, Charlie Whitman lee ki seongon 09/14/98 07:07:09 PM Please respond to lee ki seong ; Please respond to mems-cc%ISI.EDU@interlock.lexmark.com To: MEMS%ISI.EDU@interlock.lexmark.com cc: (bcc: Charles Whitman/Lex/Lexmark) bcc: Charles Whitman/Lex/Lexmark Subject: A. low stress Si3N4 in PECVD ? Hi. colleague Is any body know how we can get low stress Si3N4 in PECVD using SiH4, NH3 RF POWER, Temp, Pressure, Vacuum. If some body has a trend to lessen the stress, would you inform me ? with thanks.