durusmail: mems-talk: silicon etching with KOH solution 10%
silicon etching with KOH solution 10%
2009-10-28
2009-10-29
2009-10-29
2009-10-29
2009-10-30
silicon etching with KOH solution 10%
Brian Stahl
2009-10-30
BOE etches oxide, KOH etches silicon.  BOE etching of oxide is isotropic,
KOH etching of silicon is anisotropic.  Surface quality depends entirely on
etching parameters (concentration, temperature, agitation, surfactants,
etc.).  I would imagine that BOE surface quality is more dependent on the
surface quality of the silicon beneath the oxide than of the oxide itself...

--
Brian C. Stahl
Graduate Student Researcher
UCSB Materials Research Laboratory
brian.stahl@gmail.com / bstahl@mrl.ucsb.edu
Cell: (805) 748-5839
Office: MRL 3117A


On Thu, Oct 29, 2009 at 10:28 AM, Nathan McCorkle  wrote:

> How does KOH compare to BOE in surface quality? Is one more or less
> isotropic?
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