Hi All -

I am trying to etch 300nm Al on Si using Cr as an etch mask. The etching
tool is an Oxford PlasmaLab ICPRIE, using HBr chemistry.

I find that this works pretty well, but due (I presume) to an
electrochemical effect, the Al does not etch completely at all locations
near the Cr mask. So, I wonder: has anybody tried this before? Any
suggestions?

(I'm attempting this etch in order to pattern two masks simultaneously
on one layer of Al: the first mask in negative by liftoff of Cr, the
second mask in positive tone with photoresist.)

Thanks!

Dr. Aaron Datesman
Post-Doctoral Research Associate
Materials Science Division
Argonne National Laboratory
9700 S. Cass Avenue
Bldg. 223, B-217
Argonne, IL 60439

630-252-9154 (office)
630-252-7777 (fax)
773-899-1095 (cell)
datesman@anl.gov