Process developed for Trilogy a company started by Gene Amdahl about 25 years ago. Resist up to 40 microns thick. Pattern definition then reversal which allows any angle of side wall from -22 degrees to +22degrees. Then copper to follow up with interconnection and produce a computer on a wafer. Contact me for further complete details. Bill Moffat -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of leiwangsdu Sent: Wednesday, January 13, 2010 3:18 PM To: mems-talk Subject: [mems-talk] Lift-off pattern of Cu or Ni film I'm a research fellow. I have a question about lift-off process of Cu or Ni. Is it possible to fabricate a pattern of Cu or Ni film with nearly steep sidewall. The thickness of Cu or Ni is 3-4 microns. If anyone knows, please tell me the method and the necessary process. leiwangsdu