Unfortunately, based on my experience, I think this is a mission impossible. I don't know why you need a 90 degree sidewall with S1813. If you use S1813 as a mask to perform an anisotropic etching to the layer below (Say, the device layer of SOI), a sidewall close to 90 deg could be much easier. You might need to rethink the whole design. Jie On Sun, Jan 17, 2010 at 8:20 AM, Andrea Mazzolariwrote: > Hi All, > > i need to pattern S1813 with vertical sidewalls, but at the present time i > get an angle of about 54 deg. Awful... > My maskaligner is an old karl suss. > > Here is my procedure: > -spinning of S1813 > -soft bake 3 min at 115 deg > -photolitography in contact mode (150mJ) > -development in MF319 (about 45 seconds) > -hard bake 15 min at 115. > > Any suggestion to improve the sidewall angle ? > > Best regards, > Andrea * Zou Jie (Jay) * Department of Physics * University of Florida * Tel: +1-352-846-8018 * Email: zoujiepku@gmail.com * Homepage: http://plaza.ufl.edu/zoujie/