Hi Shifeng,

What resist thickness you used? You need to have a thick resist to
successfully lift off high aspect ratio structures. I normally use about a
couple of microns to lift off features with thickness of 250 nm. You need to
have thick resist to avoid flow over profiles which hampers lift-off.

- Prasanna

On Thu, Mar 11, 2010 at 12:44 AM, li shifeng wrote:

> Hi, All,
>
> I pattened 100nm lines on the glass substrate. The height of the line is
> around 250nm. I used an e-beam evaportor to deposit 5nm Ti and 80nm Au. I
> found it is very hard to lift off. What are the possible reasons?  Any
> suggestions to succeed with an Au lift off process for smaller patterns?
>
> Thanks!
>
> Shifeng

--
Thanks & Regards,
Prasanna Srinivasan