Hi Marcel,

Which substrate you are thinking of? It is no problem to etch Silicon with
both gases. For deep trenches you'll need to optimise the conditions. For
very deep trenches, the Bosch process (specialized RIEs only) might be a
better hint.

Best
Daniel

* Dr. Daniel Grimm
* IFW Dresden
*            - Institute for Integrative Nanosciences -
* E-Mail:  d.grimm@ifw-dresden.de
* Phone: +49 351 4659-314
* Mobile: +49 177 4926561


-----Original Message-----
From: mems-talk-bounces+d.grimm=ifw-dresden.de@memsnet.org
[mailto:mems-talk-bounces+d.grimm=ifw-dresden.de@memsnet.org] On Behalf Of
Marcel Spurny
Sent: Dienstag, 3. August 2010 16:20
To: General MEMS discussion
Subject: [mems-talk] DRIE with SF6 and CHF3

Hello everyone,

is it possible to do deep reactive ion etching in a standart RIE with
SF6 and CHF3? If so, can anyone give me a hint for the process to use?

Cheers,
Marcel