Hi everyone,

In DRIE using ICP plasma source,  After glow discharge, SF6  will be
diassosciated . There are radicals(F atom), neutrals(SF6 ? ),
electrons, positive ion(SF5+ or SFx+), negetive ion(F-).

1) How to transport the F atom to the bottom of the trench without
substrate bias help?  By positive ion's (SF5+) collision?

2) Which is the main etchant, The radicals(F atom) or positive ions (SF5+)?

3) Negtive ions (F- ) cannot reach the bottom of trench, is it a waste?

4) How does the ion/neutral ratio influence the etching if the
ratical (F atom) is the main etchant?

references or  suggestions will be appreciated

Yan Xin
-Pen-Tung Sah MEMS Research Center,
-Xiamen University, CHINA
XMU HOME:
http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html