Hi Yan Xin,

   Try key words "Black Si method"

Regards,
Wutthinan

> Hi everyone,
>
> In DRIE using ICP plasma source,  After glow discharge, SF6  will be
> diassosciated . There are radicals(F atom), neutrals(SF6 ? ),
> electrons, positive ion(SF5+ or SFx+), negetive ion(F-).
>
> 1) How to transport the F atom to the bottom of the trench without
> substrate bias help?  By positive ion's (SF5+) collision?
>
> 2) Which is the main etchant, The radicals(F atom) or positive ions
> (SF5+)?
>
> 3) Negtive ions (F- ) cannot reach the bottom of trench, is it a waste?
>
> 4) How does the ion/neutral ratio influence the etching if the
> ratical (F atom) is the main etchant?
>
> references or  suggestions will be appreciated
>
> Yan Xin
> -Pen-Tung Sah MEMS Research Center,
> -Xiamen University, CHINA
> XMU HOME:
> http://memsc.xmu.edu.cn/mems_renchaiduiwu/XuYuan_Chen-Group/index_1.html


--
Wutthinan Jeamsaksiri