Hi guys,

   We have a user that has been doing some carbon nanotube oxygen etching
using the ICP source on our STS DRIE.  He claims that in order to get his
process to work well (to completely stop silicon etching) he has to O2
clean the chamber for up to 2 hours (I'm guessing 600W of ICP).  I have
concerns that our O-ring for the Helium cooling chuck will be damaged in no
time as I seem to recall the STS suggests only 15 minutes of O2 clean.  I
will contact STS as well but wanted do get some opinions from this forum as
well.

Thanks,
  Michael