Hi Michael, We are regularly doing O2 clean for 30 minutes, and that doesn't seem to have affected our 0-ring for the helium cooling chuck, we are using the STS DRIE for last 5 years, and I have not come across people from STS telling that if you do O2 clean more time it may affect Helium cooling chuck, this is a new information for me, and I am not sure if this is true. STS,/SPTS can you clarify? On Tue, Nov 29, 2011 at 10:59 PM, Michael Martin < michael.martin@themicrowerks.com> wrote: > Hi guys, > > We have a user that has been doing some carbon nanotube oxygen etching > using the ICP source on our STS DRIE. He claims that in order to get his > process to work well (to completely stop silicon etching) he has to O2 > clean the chamber for up to 2 hours (I'm guessing 600W of ICP). I have > concerns that our O-ring for the Helium cooling chuck will be damaged in no > time as I seem to recall the STS suggests only 15 minutes of O2 clean. I > will contact STS as well but wanted do get some opinions from this forum as > well. > > Thanks, > Michael Ashwini Jambhalikar Scientist, MEMS Section,Laboratory for Electro Optic Systems Indian Space Research Organisation 1st Cross, 1st Stage, Peenya Industrial Estate, Bangalore 560058. Phone:2839 2294, 2839 2291 ext 2212