Hi, guys,

Where can I get a RIE dry etch condition for Si nano pattern etching?
I used normal condition such as CHF3 or SF6, 80W RIE power and 20 mTorr for the
etching,
but my nano patterned Cr mask was totally destroyed.

BTW, if I want to have a little bit vertical (not so vertical, I can accept some
undercut) sidewall for 2 um Si trench ( 2um depth),
can normal RIE (not ICP) been used for this etching?

If you have some experience, please kindly share me some tricks.

Thanks.

Best regards.

Charles

Dept. of Electronic Engineering
City University of Hong Kong
83 Tat Chee Avenue, Kowloon, Hong Kong
tqyhappy@ymail.com
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