Charles, Assuming this is a capacitively coupled reactor, you might want to increase your pressure so that you decrease sputtering of your mask, say 100-300mT. We typically use CF4 +20%O2 for silicon etching though SF6+O2 (10-20%) should work too. O2 is added to scavenge either the carbon or sulfur. In any event, regular RIE is an isotropic etch, you will have a horizontal etch equal to the depth. If you need anisotropic you should switch to DRIE. Cheers, Michael On Wed, Mar 20, 2013 at 11:15 PM, Charles Tangwrote: > Hi, guys, > > Where can I get a RIE dry etch condition for Si nano pattern etching? > I used normal condition such as CHF3 or SF6, 80W RIE power and 20 mTorr > for the etching, > but my nano patterned Cr mask was totally destroyed. > > BTW, if I want to have a little bit vertical (not so vertical, I can > accept some undercut) sidewall for 2 um Si trench ( 2um depth), > can normal RIE (not ICP) been used for this etching? > > If you have some experience, please kindly share me some tricks. > > Thanks. > > Best regards. > > Charles > > Dept. of Electronic Engineering > City University of Hong Kong > 83 Tat Chee Avenue, Kowloon, Hong Kong > tqyhappy@ymail.com > _______________________________________________ > Hosted by the MEMS and Nanotechnology Exchange, the country's leading > provider of MEMS and Nanotechnology design and fabrication services. > Visit us at http://www.mems-exchange.org > > Want to advertise to this community? See http://www.memsnet.org > > To unsubscribe: > http://mail.mems-exchange.org/mailman/listinfo/mems-talk > _______________________________________________ Hosted by the MEMS and Nanotechnology Exchange, the country's leading provider of MEMS and Nanotechnology design and fabrication services. Visit us at http://www.mems-exchange.org Want to advertise to this community? See http://www.memsnet.org To unsubscribe: http://mail.mems-exchange.org/mailman/listinfo/mems-talk