Hi, thanks for your help.
It would be great if you could share with that.

I am using 3 step Bosch fast etching.
1 cycle:
3 sec. dep - 200sscm C4F8-2100 W
3 sec. polymer etching - 200sscm SF6 - 1750 W
3 sec. isotropic etching- 200sscm SF6 - 2500 W
3 sec. plasma stabilization- 200sscm SF6 - 1750 W

After 3 cycles, I can see resist flakes on top of the wafer. and after 5
cycles I see them all over the place.


On Thu, Oct 3, 2013 at 7:08 PM, Ioannis Nikolaou wrote:

> Hello, I think there is a solution for you! I was trying to etch until
> 450um of Silicon with different photo-resist. My proposal is to change
> resist like thicker one such as SPR220. I can send you my thesis for
> further informations, if you need. Can you provide us some informations
> about the etching recipe?
> Kind Regards
> Ioannis
>
>
> 2013/10/3 Orozaliev Ajymurat Nurdinovich 
>
> > Hi All,
> >
> > I was working on thick AZ9260 resist for using as a mask on DRIE tool.
> > My target is to etch 450-480 um of Silicon. I have preliminary results
> for
> > PR:Si selectivity, which is ~1:25. To etch 450 um of Si, I would need at
> > least 18 um(but more the better) of AZ9260. With single coating I am
> > getting maximum of 15 um. But when I do double spinning and expose it,
> the
> > resist is turning yellowish-orange. Further, I develope it, but when I
> put
> > it inside the DRIE tool, after a few cycles, the resist is forming flakes
> > and contaminating inside the chamber.
> >
> > Here is my recipe:
> > -2000 rpm - 60 s
> > -removing edge bead with Acetone, while spinning.
> > -Soft bake at 110 C for 90 s
> > -2000 rpm - 60 s
> > -Soft bake at 110 C for 240 s.
> >
> > -Exposure, broadband source,950 mJ/cm2.
> > -Developer, AZ400:DI 4:1, 3-4 mins.
> > With this recipe, I am getting ~25 um. but when I put it inside DRIE,the
> > resist is just peeling of and forming flakes.
> >
> > Can you please advise if there is something I am missing?
> > Also, any recipe would be much appreciated.
> >
> > kind regards,
> > Ajymurat
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