I would use photoresist if you can make it thick enough for your nitride-to-
photoresist selectivity.Chromium will work, but in my experience using it as a
mask for oxide in SF6 RIE, a little of the Cr will be sputtered off and be
redeposited on the area you're trying to etch, causing micromasking.  --Kirt
Williams



     On Thursday, September 10, 2015 4:29 PM, Yuan Jia
 wrote:


 Hi All

I have a quick question, I am trying to etch through 300 nm of silicon
nitride using SF6 dry etch, and I am considering using 50 nm of chrome as
mask layer, will this mask layer survive the etching?

Or is there a better mask layer material?

Thanks very much
Best Regrads

--
Yuan Jia

Mechanical Engineering Department
Columbia University
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