The best way to eliminate under-plate of resist and SU8 is to use an adhesion
layer such as Ti or TiW which would have to be removed from the area to be
plated. Other tricks that I have used to plate is to go into the plating bath
wet, dip the wafer in DI water so that there is no air trapped that stops
plating. You could also try to get another contact on the wafer for better
current spreading.

Rick


-----Original Message-----
From: Sunshine Littlecreek [mailto:sunshine.littlecreek@gmail.com]
Sent: Tuesday, October 03, 2017 12:52 PM
To: mems-talk@memsnet.org
Subject: Re: [mems-talk] Problem with SU-8 Thick film

Hi Rick,
My seed layer is 2400 Å thick. The O2 plasma discus cycle is 1 minute at 50 W.
The plating solution is sulfite based. I have one electrical contact which is 3
cm wide x 3 cm long, with 250 um traces to the elements I want to plate. The
current density, based on a calculation on the combined areas of the plateable
elements is 25 mA/cm^2.

I hope this information can help solve the problem! Also if anyone has had
problems with plating occurring under structures and pushing the photoresist
(also SU-8) off, I’d appreciate hearing how you fixed the issue.

Thanks,
Sunshine Littlecreek
Rutgers University
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