Hi Honggang,

RIE etching is your best bet, I believe.  LAM makes a number of tools,
specifically the LAM590 would be a common choice.

A gas mixture of 3:1 of CF4:CHF3 at 3 torr with a power above 500W should
etch approximately 3000-4000 A per min of PECVD Si-N while only etching
about 5-10 A per minute of sputtered Al2O3.


Justin C. Borski
MEMS Program Manager
Advanced MicroSensors Inc.
phone: (508) 770 - 2088


-----Original Message-----
From: Honggang Jiang [mailto:hgjiang@yahoo.com]
Sent: Monday, October 21, 2002 5:29 PM
To: mems-talk@memsnet.org
Subject: [mems-talk] etching Si-N, but not Al2O3


Hi,
I wonder if somebody can suggest any etchants that
etch PECVD Si-N, but do not etch or etch very slowly
alumina coating. Thanks in advance for your help

Honggang Jiang
Second Sight, LLC
28460 Avenue Stanford, Suite 200
Valencia, California 91355
Ph: 661 775 3990
Fx: 661 775 3989

__________________________________________________
Do you Yahoo!?
Y! Web Hosting - Let the expert host your web site
http://webhosting.yahoo.com/

_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
options, visit http://www.memsnet.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services.
Visit us at http://www.memsnet.org/