Etching rate for BCB (as well as some curable polyimide coatings) is very
dependent on the curing conditions, such as temperature and the duration.
For a flow of 250sccm of typical gas mixture of 20% CF4 balanced with O2 at
power set at 100W etching rate was observed to differ from 1000A to 5000A
depending on the curing conditions, typically the higher curing tem-re the
faster the etching rate.
As for BCB use with III-V semiconductors it is experimented with to form
passivation layers for a variety of electronic/optoelectronic devices.
Ivan Shubin,
Research Scientist,
ECE Department, University of California at San Diego
La Jolla, CA 92093
ph. 858-534-6570
fax 858-534-0556

Date: Mon, 10 Feb 2003 08:51:30 +0800
From: "Zhang Zhenfeng" 
To: "General MEMS discussion" 
Subject: Re: [mems-talk] Etching rate for BCB
Message-ID: <00ff01c2d09e$93c02ad0$3300a8c0@zzf>
References: <003b01c2cd60$1983fcb0$332aa995@ENPC3835>
Content-Type: text/plain;
charset="iso-8859-1"
MIME-Version: 1.0
Precedence: list
Reply-To: General MEMS discussion 
Message: 2
I gave you a experiment performance :CF4 15sccm O2 25sccm Pr:250W Pressure
10mT Bias 400V rate360nm/min
I have another problems about BCB .Do you know the use when the bcb use in
semiconductor eg. III-V
---- Original Message -----
From: "haixinzhu" 
To: 
Sent: Thursday, February 06, 2003 5:46 AM
Subject: [mems-talk] Etching rate for BCB

 > Dear all,
 >
 > I am trying to etch BCB layer using 1:4 CF4/O2, anyone know the etching
rate?
 >
 > Thanks.
 >
 > Michael
 >
At 12:00 PM 2/10/2003 -0500, you wrote:
>mems-talk@memsnet.org

Ivan Shubin,
Research Scientist,
ECE Department, University of California at San Diego
La Jolla, CA 92093
ph. 858-534-6570
fax 858-534-0556