We succesfully have bonded SOI (450/1/50um) and Pyrex wafers anodically. Our
procedure is as follows:
The bonding is done at 300C, at 1atm N2. Voltage is ramped slowly up to 600V-
700V, during that the current should not exceed 2mA. This may take up to 10
minutes. Herafter the we wait until the current drops below 0.5mA and wait
additionally 10 minutes before the voltage is shut off.

best regards

K. P. Larsen

-----Original Message-----
From: A.K.Ismail [mailto:A.K.Ismail@newcastle.ac.uk]
Sent: 13. februar 2003 10:39
To: mems-talk@memsnet.org
Subject: [mems-talk] Anodic bonding SOI wafer and glass


Hi,

Does anybody has experience of how to bond SOI wafer to glass wafer using
anodic bonding?
Our SOI wafer is about 175-450 micron Si, 1 micron Oxide and 1 micron Si p+.
The interface bonding layer would be the 1 micron Si p+ layer on SOI wafer
with another glass substrate. Your response would be appreciated.

Thank you.

A.K.Ismail