Hi
We did anodic bonding of SOI to glass wafer, 4"
Our device Si is 50 microns thick and the SiO2 is 3 microns thick.
The recepee is similar to anodic bonding of Si to glass.
I believe we workd at 450°C with a Voltage of about 1500 volts.
Greetings
Stefan

-----Original Message-----
From: A.K.Ismail [mailto:A.K.Ismail@newcastle.ac.uk]
Sent: Donnerstag, 13. Februar 2003 10:39
To: mems-talk@memsnet.org
Subject: [mems-talk] Anodic bonding SOI wafer and glass


Hi,

Does anybody has experience of how to bond SOI wafer to glass wafer using
anodic bonding?
Our SOI wafer is about 175-450 micron Si, 1 micron Oxide and 1 micron Si p+.
The interface bonding layer would be the 1 micron Si p+ layer on SOI wafer
with another glass substrate. Your response would be appreciated.

Thank you.

A.K.Ismail



_______________________________________________
MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list options,
visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
Hosted by the MEMS Exchange, providers of MEMS processing services. Visit us at
http://www.memsnet.org/