Hi,

        Can I have a more general question regarding stripping
photoresist? Can it be stripped 100% with 0% damage on underlayer? It is
generally known that the bond strength at the interface between the
photoresist and substrate is much higher than the cohesive bonds between
polymers within the resist. I've read a lot of references regarding
photoresist stripping and all the nice strip rate curves, but I don't
really get a clear answer as to whether it can be stripped completely down
to the last monolayer in wet chemistry or RIE. Of course the interfacial
layer can be sputtered away for 100% clean strip, but that means there
must be certain degree of damage on the underlayer. Does anyone have a
better answer/solution to this? Thanks in advance.


Yours sincerely,

Isaac Chan

Ph.D. Candidate
Dept. Electrical & Computer Engineering
University of Waterloo
200 University Ave. W
Waterloo, Ontario, Canada
N2L 3V1
Tel: (519) 729-6409, ext. 6014
Fax: (519) 746-6321
iwchan@venus.uwaterloo.ca
http://www.ece.uwaterloo.ca/~a-sidic


On Thu, 13 Mar 2003, Jacques Jonsmann wrote:

> The residues you see are Antimony and antimonyoxide. It has a grey to black
powdery appearance. Usually it can be removed using ultrasound. The antimony
comes from the photo acid generator in the SU-8 which is an antimony salt.
>
> Jacques Jonsmann
>
>
>       -----Oprindelig meddelelse-----
>       Fra: Isaac Wing Tak Chan [mailto:iwchan@venus.uwaterloo.ca]
>       Sendt: ma 10-03-2003 17:00
>       Til: General MEMS discussion
>       Cc: S.O. Ryu
>       Emne: Re: [mems-talk] What is the etch rate of SU-8 in O2 plasma?
>
>
>
>       Hi,
>
>               May I add a question? I've tried to ash SU-8 with O2 plasma in
>       ICP/RIE system. But there is a film of residue on wafer. Have you seen
>       such problem?
>
>       Isaac
>
>
>       On Fri, 7 Mar 2003 BobHendu@aol.com wrote:
>
>       > What type of reactor do you have? Is it a barrel asher or a single
wafer system. OUr experience with oxygen and su8 shows it will ash but it is
better if you have not done the second bake. This has been done in an icp/rie
system and the etch rate is a little less than other negative working
photoresists. Bob Henderson
>       >
>       > _______________________________________________
>       > MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
>       > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-
talk
>       > Hosted by the MEMS Exchange, providers of MEMS processing services.
>       > Visit us at http://www.memsnet.org/
>       >
>
>       Yours sincerely,
>
>       Isaac Chan
>
>       Ph.D. Candidate
>       Dept. Electrical & Computer Engineering
>       University of Waterloo
>       200 University Ave. W
>       Waterloo, Ontario, Canada
>       N2L 3V1
>       Tel: (519) 729-6409, ext. 6014
>       Fax: (519) 746-6321
>       iwchan@venus.uwaterloo.ca
>       http://www.ece.uwaterloo.ca/~a-sidic
>
>
>       _______________________________________________
>       MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list
>       options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk
>       Hosted by the MEMS Exchange, providers of MEMS processing services.
>       Visit us at http://www.memsnet.org/
>
>
>