Hi Sriram,

You must make sure that the Tri Chloro Ethylene is completely gone from the
surface, other wise you may get a reaction with the HCL that will attack the
interface between the Pt and SiO2. How come you are using boiling TCE (TCE
is a very dangerous solvent pretty much banned here in the USA), there are
better alternatives such as 5:1:1  H2O:H2O2:NH4OH (let the solution cool off
after mixing), the Pt will act as a catalyst and start a very vigorous
reaction, stay in for 5 mins, rinse in DI and N2 dry.

Another caution 3000A Pt maybe under high stress and want to peel off on its
own.

Rick


-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org]On Behalf Of sriramb
Sent: Saturday, July 26, 2003 5:43 AM
To: MEMS-talk@memsnet.org
Subject: [mems-talk] Gold plating


Dear All,

I tried to plate Gold over a Platinum thin film (3000 Angstrom) on SiO2.
Before the plating, we go through a degreasing step, wherein we boil the
Silicon wafers in Tri Chloro Ethylene, followed by a dilute HCl dip.
The Pt film is deposited by DC sputtering.

The trouble is that the Pt film peels off when the HCl dip is done.

What should I do to overcome this problem?

Thanks in advance.

Thanking You,
With Best Regards,
Sriram
Senior Process Engineer,
BEL Bangalore
INDIA



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