I have done a RIE process on a silicon wafer in a CHF3(80 sccm,3.8*10^-2 mbar) plasma for 1 hour for my degree thesis. I'm looking for a metod to remove the polymer film due to the process on the surface. I have read that it is possible with an oxigen plasma RIE process but I don't know what parameters to use.I'm also interested in a metod to clean the RIE chamber, if it is necessary in this case. Please, help me. Thanks.