Leonard, I do a 100 watt, 100mT, 5 minute, O2 run after every SF6 run I do. Once a month I'll do this run, wipe the chamber down with methanol, and then do another O2 run. I seems to keep my chamber clean. Brent Leonard81@vodafone.it wrote: > I have done a RIE process on a silicon wafer in a CHF3(80 sccm,3.8*10^-2 mbar) plasma for 1 hour for my degree thesis. > I'm looking for a metod to remove the polymer film due to the process on the surface. I have read that it is possible with an oxigen plasma RIE process but I don't know what parameters to use.I'm also interested in a metod to clean the RIE chamber, if it is necessary in this case. > Please, help me. Thanks. > > _______________________________________________ > MEMS-talk@memsnet.org mailing list: to unsubscribe or change your list > options, visit http://mail.mems-exchange.org/mailman/listinfo/mems-talk > Hosted by the MEMS Exchange, providers of MEMS processing services. > Visit us at http://www.memsnet.org/