In a capacitively coupled RIE with 6" electrodes, we run oxygen plasmas
for etching polymers at 200-300 mTorr and 300 W. To clean the chamber,
use oxygen at 400mTorr and 300-400W.

-Mike


>>> Leonard81@vodafone.it 10/17/03 9:33 AM >>>
I have done a RIE process on a silicon wafer in a CHF3(80 sccm,3.8*10^-2
mbar) plasma for 1 hour for my degree thesis.
I'm looking for a metod to remove the polymer film due to the process on
the surface. I have read that it is possible with an oxigen plasma RIE
process but I don't know what parameters to use.I'm also interested in a
metod to clean the RIE chamber, if it is necessary in this case.
Please, help me. Thanks.


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