I am assuming that you are referring to wet or dry furnace oxidation.

The SiO2 will be an insulator and a very good one in either case.
"Thermal ox" has the highest structural integrity of all the ways of
making an oxide and will be very insulating.

In terms of leakage they are largely the same. The choice of wet or dry
furnace oxidation is dependent on the thickness you want to grow.

Ed

-----Original Message-----
From: mems-talk-bounces@memsnet.org
[mailto:mems-talk-bounces@memsnet.org] On Behalf Of Wenlin Jin
Sent: Tuesday, January 08, 2008 4:10 PM
To: General MEMS discussion
Subject: [mems-talk] conductivity of SiO2 layer grown on top of
heavilydoped silicon


Hi, All,

I'm considering grow a silicon oxide layer through wet or dry oxidation
process. The question is: will the oxide layer obtained in such a way be
conductive? Advices are appreciated.