The work published over time by Grove and his colleagues had a 'fitting'
factor, which appeared in the model as an initial oxide thickness, which
they could never explain.

Subsequently, literally a thousand papers were published on oxidation of
silicon.

As a way to sift through this massive pile, I suggest you look for the
articles by Hisham Massoud, who is a professor of EE at Duke, who at one
point had done what was acknowledged to have been the best work on
oxidation of very thin oxide layers.

Sincerely,

Albert K. Henning, PhD
Director of MEMS Technology
NanoInk, Inc.
215 E. Hacienda Avenue
Campbell, CA  95008
408-379-9069  ext 101
ahenning@nanoink.net

-----Original Message-----
From: Jose Guevarra [mailto:jose.dr.g@gmail.com]
Sent: Friday, April 18, 2008 10:33 PM
To: General MEMS discussion
Subject: [mems-talk] SiO2 growth on bare silicon

Hi,

   I've found that the grove-deal model of oxidation doesn't work well
for growing oxide on bare silicon waters.  What model should I use to
try to find the time to grow say a 200 angstrom layer of oxide (dry
and/or wet)?