Dear Kamlesh; As you know (Maybe you don't know) all wet etchents etches at equal rate in all directions. So wet etch is ISOTROPIC ETCH TECHNIQUE. Even if you increased the water percent of the etchent you will not obtain the shape that you have explained in your mail. I guess, DRY ETCH is very suitable for your fabrication.. You can try it. Regards. Tolga YELBOGA Project Engineer Nanotechnology Researh Center Bilkent University Bilkent, Ankara 06800 TURKEY Voice: 90-312-290-1020 http://www.nanointurkey.com http://www.nanotam.bilkent.edu.tr -----Original Message----- From: Jaibir sharma [mailto:jaibirs@rediffmail.com] Sent: Tuesday, September 16, 2008 7:24 PM To: General MEMS discussion Subject: Re: [mems-talk] problem in BHF etching dear kamlesh, I agree with Mr sinha.if you have facility you can use thermal oxide in place of PECVD or LPCVD.We use the following recipe for BHF (30gm NH4OH in 45 ml of DI water)-after filtering one ninth of filtered solution we add HFto it. I hope this may work. On Tue, 16 Sep 2008 kamlesh_engg@iitb.ac.in wrote : >hi >i am doing BHF etch on silicon dioxide deposited on silicon wafer. >i am using 5:1 BHF etchant >etch rate 120 nm/min >i want to etch 1 micron deeep channel with 200 micron width. there are >multiple channels in parallel each seprated by 6 micron. so i diped my >sample in BHF for 8.33 min >but after the etch no channels was formed and everything is etched away. >can anyone tell me what could be the problem ???