Daniela, You might be able to bond these wafers at a lower temperature ( 320- 350C) by increasing/optimizing the voltage and time instead. You should see a much reduced bow at lower processing temps with the same glass wafers. Thanks Sumant SUSS Microtec -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of Daniela Kögler Sent: Wednesday, September 24, 2008 9:28 AM To: 'General MEMS discussion' Subject: [mems-talk] Anodic bonding Hi, I have to anodically bond SOI-Wafers on Borosilkatglas-Wafers. The parameters I use are 430 °C and 1000 V. The problem is that the wafer package after the bond process has a very high bow (220 um +). Does anybody now how to reduce the bow? Thanks! Best regards Daniela