Daniela, The fact that you refer to the bonder as an AB1 tells me that this bonder is pretty old. Does this bonder have double-sided heating capability? Its possible that the two substrates are at different temperatures during the bond, and this causes bow upon cool-down. In general, anodic bonding should be able to work down to 300ºC. Best Regards, Chad Brubaker EV Group invent * innovate * implement Senior Process Technology Engineer - Direct: +1 (480) 305 2414, Main: +1 (480) 305 2400 Fax: +1 (480) 305 2401 Cell: +1 (602) 321 6071 E-Mail: C.Brubaker@EVGroup.com, Web: www.EVGroup.com -----Original Message----- From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On Behalf Of Daniela Kögler Sent: Monday, November 03, 2008 9:05 AM To: 'General MEMS discussion' Subject: [mems-talk] Anodic bonding Dear all, I have to perform an anodic bond between a Borofloat and a Si Wafer. The bonding is successful; unfortunately the bow of the package after the bonding is very high. I work with a Bonder from the EV Group - AB1 (EVG501). My parameters are: Heating 30 min Bonding 5 min 1000V Cooling to 150 °C I tried the temperatures 430 °C and 360 °C. At 430°C the bow is 225 um, at 360°C the bow is still 200 um. Can I reduce the bonding temperature with the borofloat wafer to 300°C? All kinds of suggestions to reduce the bow will be highly appreciated! Best regards Daniela University of Applied Science Esslingen