The Ti-Si contact is good in my experiment. The silicon is p-doped (10e19/cm^3). Before sputtering Ti layerThe silicon wafer is dipped in 1:50 HF to romver nature oxide. I-V characters show linear ohmic conduction and have no difference compared to AL-Si contact. Maybe anneal process can improve ohmic contact. 2009/3/26 Ruiz, Marcos Daniel (SENCOE)> Javier, > > What kind of surface preparation are you doing before the deposition? > > I would expect that making sure your Si surface is as clean and oxide > free as possible would improve your ability to get a good ohmic contact. > > Dan >