Good afternoon,

I want to use  polyimide as a sacrificial layer (4 microns gap) to do a
suspended bridge.  My concern is that I do not have a asher, I have a
Tegal 903E plasma etcher which is meant to run at high pressure (1.5 to
4 torr).  I ran a sample at 1 torr and 40 SCCM O2 for 2 hours. ( I
understand that this is still too high as I read in the literature that
much lower pressure is recommended for suspended material).  Anyway, the
polyimide started to be etch in a wavy manner but the portion of the
suspended layer that started to be free was..warping.  I stopped the
process .  I tried with 275mt (even though I am out of range of the
instrument) and it took forever to remove most polyimide but the freed
layer was very warped.

Is there any hope that I can remove the polyimide with this instrument
or should I forget about it?

Thank you very much

Suzanne Paradis, ing. M.Sc.