Andrea,

Maybe you can start with SOI with a low stress SiN buried layer.

Best regards,

Peter Kuijpers
MiPlaza Technology Laboratories
Philips Research Europe
High Tech Campus 04
Postbox HTC-4-1
5656 AE Eindhoven
The Netherlands
Tel.: +31 402743667
         +31 612507027
Email: p.e.m.kuijpers@philips.com

-----Original Message-----
From: mems-talk-bounces@memsnet.org [mailto:mems-talk-bounces@memsnet.org] On
Behalf Of Andrea Mazzolari
Sent: Sunday 20 December 2009 20:25
To: mems-talk@memsnet.org
Subject: [mems-talk] silicon membranes

Hi all,

i need to realize silicon memabranes of thickness 29um. I can not start
from SOI wafers, cos the membrane will remain under stress state due to
the oxide in the frame.

I plan to realize the job by KOH etching, but how to precisely control the
membrane thickness ? Is there any suggestion ?

Thanks,
Andrea